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APT5531BFLL APT5531SFLL
550V 19A 0.310
BFLL D3PAK
POWER MOS 7
(R)
R
FREDFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
TO-247
SFLL
* Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package * FAST RECOVERY BODY DIODE
D G S
All Ratings: TC = 25C unless otherwise specified.
APT5531 UNIT Volts Amps
550 19 76 30 40 266 2.13 -55 to 150 300 19 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
960
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
550 19 0.310 250 1000 100 3 5
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 9.5A)
Ohms A nA Volts
3-2003 050-7223 Rev A
Zero Gate Voltage Drain Current (VDS = 550V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 440V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol C iss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT5531BFLL - SFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 275V ID = 19A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 275V ID = 19A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 367V, VGS = 15V ID = 19A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 367V VGS = 15V ID = 19A, RG = 5
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
1811 365 26 42 12 25 11 8 27 7 156 76 283 84
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns
19 76 1.3 15
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -19A)
5
dv/
t rr
Reverse Recovery Time (IS = -19A, di/dt = 100A/s) Reverse Recovery Charge (IS = -19A, di/dt = 100A/s) Peak Recovery Current (IS = -19A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
250 400 1.9 6 15 26
TYP MAX
Q rr IRRM
C
Amps
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.47 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.50
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 5.32mH, RG = 25, Peak IL = 19A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID19A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9 0.40 0.7 0.30 0.5 Note:
PDM
3-2003
0.20 0.3 0.10 0.1 0.05 0 10-5 10-4 SINGLE PULSE
t1 t2
050-7223 Rev A
JC
Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
Z
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
45 40
RC MODEL Junction temp. ( "C) 0.205 Power (Watts) 0.264 Case temperature 0.0981F 0.00544F
APT5531BFLL - SFLL
VGS =15 & 10V
ID, DRAIN CURRENT (AMPERES)
8V 7.5V
35 30 25 20 15 10 05 0 6.5V 6V 5.5V
7V
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 60 50
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0 5 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
NORMALIZED TO = 10V @ 9.5A V
GS
ID, DRAIN CURRENT (AMPERES)
1.30 1.20 VGS=10V 1.10 VGS=20V
40
30 20
TJ = +125C
1.00
TJ = +25C 10 0 TJ = -55C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0.90 0.80
0
10 20 30 40 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
20
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
I
D
1.15
ID, DRAIN CURRENT (AMPERES)
16
1.10
1.05
12
1.00
8
0.95 0.90 0.85 -50
4
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
= 9.5A V
GS
0 25
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
= 10V
2.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.1
1.0 0.9 0.8
1.5
1.0
0.5
0.7 0.6 -50
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7223 Rev A
3-2003
APT5531BFLL - SFLL
78
OPERATION HERE LIMITED BY RDS (ON)
10,000
ID, DRAIN CURRENT (AMPERES)
Ciss
C, CAPACITANCE (pF)
1,000 Coss 100
100S 10
TC =+25C TJ =+150C SINGLE PULSE 1 1 10 100 550 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = 19A
1mS 10mS 10
Crss 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
D
200 100
12
VDS=110V
VDS=275V 8
TJ =+150C TJ =+25C 10
VDS=440V
4
10 20 30 40 50 60 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 40 td(off) 30
td(on) and td(off) (ns)
V R = 5
0
0
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 40
30
tr and tf (ns)
DD G
tf
= 367V V = 367V
20
T = 125C
J
20
DD G
L = 100H
R
= 5
T = 125C
J
L = 100H
10 td(on) 0 0 15 20 25 30 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
10 tr 0 5 10 15 20 25 30 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 500 0 5 10
500
= 367V R = 5
L = 100H E ON includes diode reverse recovery.
SWITCHING ENERGY (J)
400
SWITCHING ENERGY (J)
T = 125C
J
Eon
400
300
300 Eon 200 Eoff
V I = 367V
200
DD
3-2003
D J
= 19A
100 Eoff 0 5 10
100
T = 125C L = 100H E ON includes diode reverse recovery.
050-7223 Rev A
0
0 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 5
15 20 25 30 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
Typical Performance Curves
APT5531BFLL - SFLL
Gate Voltage
10 % TJ = 125 C td(on)
Drain Current
90%
Gate Voltage T = 125 C J
t
d(off)
t f
Drain Voltage
90% tr 5% 10 %
Switching Energy
90%
5%
10%
Drain Voltage
Drain Current
0
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF60B
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
Drain (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
D PAK Package Outline
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532)
3
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
1.04 (.041) 1.15 (.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99 (.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
19.81 (.780) 20.32 (.800)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7223 Rev A
Gate Drain Source
5.45 (.215) BSC {2 Plcs.}
Heat Sink (Drain) and Leads are Plated
3-2003
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)

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